Diffusion in semiconductors

editor, D.L. Beke ; authors, C.E. Allen ... [et al.]

Subvolume A of two subvolumes on "Diffusion in Semiconductors and Non-Metallic Solids" consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.

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  • From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion

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書名 Diffusion in semiconductors
著作者等 Beke, D. L.
Allen C. Edgar
Bracht H.
Bruff C.M.
D'Heurle F.M.
Dutt M.B.
Erdelyi Gabor
Gas P.
Murch G.E.
Seebauer Edmund G.
Allen C. E.
書名別名 Landolt-Börnstein Numerical data and functional relationships in science and technology
シリーズ名 Landolt-Börnstein Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie
出版元 Springer
刊行年月 c1998
ページ数 1 v. (various pagings)
大きさ 28 cm
付随資料 1 CD-ROM
ISBN 3540609644
ISSN 09427988
NCID BA35668602
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言語 英語
出版国 ドイツ