Plasma deposition of amorphous silicon-based materials

edited by Giovanni Bruno, Pio Capezzuto, Arun Madan

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced.

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[目次]

  • G. Bruno, P. Capezzuto, and G. Cicala, Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects: Some Fundamentals on Plasma Deposition. Chemical Systems for Amorphous Silicon andIts Alloys. Effect of Novel Parameters. Deposition Mechanisms and Controversial Aspects. G. Turban, B. Drevillon, D.S. Mataras, and D.E. Rapakoulias, Diagnostics of Amorphous Silicon (a-Si) Plasma Processes: Optical Diagnostics. Mass Spectrometry and Langmuir Probes. In Situ Studies of the Growth of a-Si:H by Spectroellipsometry. C.M. Fortmann, Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys: General Comments on Amorphous Alloy Growth. Relationship between Mobility and Device Performance. Concepts of Electronic Transport in Amorphous Semiconductors. Summary and Conclusions. J. Perrin, Reactor Design for a-Si:H Deposition: Power Dissipation Mechanisms in SiH4 Discharges. Material Balance and Gas-Phase and Surface Physicochemistry. Concepts of Reactors for a-Si:H Deposition. Summary and Conclusions. A. Madan, Optoelectronic Properties of Amorphous-Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique: Effect of the Properties of a-SiH Due to Parametric Variations Using the PECVD Technique. Alternative Deposition Techniques. Surface States, Interface States, and Their Effect on Device Performance. Y. Hamakawa, W. Ma, and H. Okamoto, Amorphous Silicon-Based Devices: Significant Advantages of a-Si in Its Alloys as a New Optoelectronic Material. Progress in Amorphous Silicon Solar Cell Technology. Integrated Photosensor and Color Sensor. Aspects of a-Si Imaging Devices Application. a-Si Electrophotographic Applications. Visible-Light Thin-Film Light-Emitting Diode (TFLED). Subject Index. (Chapter Headings): Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes. Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys. ReactorDesign for a-Si:H Deposition. Optoelectronic Properties of Amorphous Silicon Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. Amorphous Silicon Based Devices.

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この本の情報

書名 Plasma deposition of amorphous silicon-based materials
著作者等 Bruno, Giovanni
Capezzuto, Pio
Madan, A.
etc.
シリーズ名 Plasma-materials interactions
出版元 Academic Press
刊行年月 c1995
ページ数 xi, 324 p.
大きさ 24 cm
ISBN 012137940X
NCID BA2626808X
※クリックでCiNii Booksを表示
言語 英語
出版国 アメリカ合衆国
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