"Growth of Crystals, Volume 21" presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.
Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.
Volume 20 presents the latest Russian and Ukrainian research on the three principal crystallization methods: vapor, solution, and melt. Divided into three sections, chapters focus on heterostructure formation, growth from solutions, and the preparation of a homogeneous material during melt crystallization. Topics include the manifestation of macrodefects connected with the generation of twins in HgCdTe films, mechanisms that limit the accumulation of an impurity in front of a growth step, and a new method for preparing untwinned single crystals of certain high-temperature 1-2-3 superconductors.
This series focuses on theoretical and applied studies in rapidly emerging areas of the growth and preparation of crystals and crystalline films. Volume 18 includes articles on processes of growth surfaces, molecular-beam epitaxy, and the growth of crystals from solutions, fluxes, and the melt.
Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites
Yu.Yu. Hervieu, M.P. Ruzaikin. Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals
L.V. Yashina, V.I. Dernovskii, V.P. Zlomanov, V.I. Shtanov. Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport
I.V. Ivonin, L.G. Lavrent'eva, L.P. Porokhovnichenko. Growth and Structure of Si Epilayers on Porous Si
A.A. Fedorov, M.A. Revenko, E.M. Trukhanov, S.I. Romanov, A.A. Karanovich, V.V. Kirienko, M.A. Lamin, A.K. Gutakovskii, O.P. Pchelyakov, L.V. Sokolov. Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs
M.V. Yakushev, Yu.G. Sidorov, L.V. Sokolov, V.G. Kesler, L.M. Logvinskii, T.A. Gavrilova. Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers of Semiconductors
E.M. Trukhanov, A.V. Kolesnikov, G.A. Lyubas. InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers
Yu.B. Bolkhovityanov, A.S. Yaroshevich, M.A. Revenko, E.M. Trukhanov. Theory of Island Film Growth from a Eutectic Melt at the Late Stage of Evolution
Heterostructure Formation in Molecularbeam and Gasphase Epitaxy: Direct Synthesis of Nanostructures in the Germanium- Silicon System by Molecularbeam Epitaxy (O.P. Pchelyakov, L.V. Sokolov). Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure, Defects, and Electronic Properties (M.G. Mil'vidskii et al.). Longrange Stresses and Their Effects on Growth of Epitaxial Films (E.M. Trukhanov). Growth of and Defect Formation in CdxHg1xTe Films during Molecularbeam Epitaxy (Yu.G. Sidorov et al.). Structure of Amorphous Nb Oxide Films and Their Crystallization (A.A. Sokol et al.). Growth of Crystals in Lowtemperature and Hydrothermal Solutions: Morphological Stability of a Linear Step in the Presence of a Mobile Adsorbed Impurity (V.V. Voronkov). Growth Kinetics and Bipyramidface Morphology of KDP Crystals (L.N. Rashkovich, G.T. Moldazhanova). Growth and Certain Properties of KDP Crystals Affected by pH and Temperature (V.A. Kuznetsov et al.). KOH-ZrO2-SiO2-H2O Hydrothermal System: Formation of Potassium Zirconosilicates and Crystallochemical Correlations among Them (G.D. Ilyushin, L.N. Dem'yanets). Growth of Crystals from the Melt: Compositions of Congruently Melting Threecomponent Solid Solutions Determined by Finding Acnodes on Ternarysystem Fusion Surfaces (P.P. Fedorov). Coriolis Force on Melt Convection during Growth of Crystals in a Centrifuge and under Weightlessness (V.S. Yuferev). Convectioninduced Effects in the Stepheater Stockbarger Growth of CaF2 Crystals: Growthfront Shape (N.A. Verezub et al.). Crystallization Front Structure during Growth of Single Crystals from a Melt in Various Crystallographic Directions (O.P. Fedorov, E.L. Zhivolub). Growth, Detwinning, and Properties of YBa2Cu3Ox and TmBa2Cu3Ox Single Crystals (V.I. Voronkova, V.K. Yanovskii). Index.