Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators

[目次]

  • Table of Contents / p7
  • Chapter1 Introduction / p1
  • Chapter2 Simulation and analysis of the fundamental properties of ultrathin-film SOI MOSFETs / p7
  • 2.1 Simulated device structure / p7
  • 2.2 Subthreshold characteristic / p9
  • 2.3 Static current-voltage characteristic / p13
  • 2.4 Switching characteristic / p27
  • Chapter3 Preparation of SOI films by electron beam recrystallization and their application to 3D LSIs / p33
  • 3.1 Amplitude-modulated pseudo-line electron beam recrystallization / p33
  • 3.2 Heat analysis using the finite element method / p38
  • 3.3 Fabrication of a stacked CMOS inverter using a tungsten cap / p48
  • 3.4 Improvement of the seed structure and crystal properties of SOI films / p54
  • 3.5 Application of electron beam annealed SOI films to the fabrication of a 3D image processor / p63
  • Chapter4 Fabrication of ultrathin-film SOI MOSFETs and measurements on their fundamental characteristics / p73
  • 4.1 Device fabrication process / p73
  • 4.2 Measurements of fundamental electrical characteristics / p76
  • Chapter5 Study on the lowering of drain breakdown voltage in ultrathin-film SOI MOSFETs / p93
  • 5.1 Background / p93
  • 5.2 Drain breakdown voltage in fabricated ultrathin-film SOI MOSFETs / p94
  • 5.3 Analysis by two-dimensional simulation / p96
  • 5.4 Measurements of an asymmetric structured device / p103
  • 5.5 Transient analysis for the drain breakdown process / p105
  • Chapter6 Perspectives of ultrathin-film SOI MOSFET technology / p113
  • 6.1 Comparison of scalability between bulk MOSFETs and ultrathin-film SOI MOSFETs / p113
  • 6.2 Problems to be overcome in ultrathin-film SOI MOSFET technology / p117
  • Chapter7 Conclusions / p125
  • Appendix A: Analytical formulation of the threshold voltage and vertical electric field in ultrathin-film SOI MOSFETs / p129
  • Appendix B: Formulation of the heat conduction equation in the finite element method / p131
  • Appendix C: Electrical measurement of SOI thickness in ultrathin-film SOI MOSFETs / p133
  • Appendix D: Generation-recombination model in the 2D device simulator employed / p137
  • References / p139
  • List of publications and presentations at international conferences / p153

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書名 Electrical properties of metal-oxide-semiconductor field-effect-transistors made in ultrathin-film silicon-on-insulators
著作者等 吉見 信
書名別名 絶縁膜上のシリコンに形成したMOSトランジスタの電気特性
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